Researcher Portfolio
McNeely, Paul
Stellarator Heating and Optimisation (E3), Max Planck Institute for Plasma Physics, Max Planck Society, Technology (TE), Max Planck Institute for Plasma Physics, Max Planck Society, W7-X: Heating (HT), Max Planck Institute for Plasma Physics, Max Planck Society, W7-X: Heating and CoDaC (HC), Max Planck Institute for Plasma Physics, Max Planck Society
Researcher Profile
Position: Technology (TE), Max Planck Institute for Plasma Physics, Max Planck Society
Position: W7-X: Heating (HT), Max Planck Institute for Plasma Physics, Max Planck Society
Position: W7-X: Heating and CoDaC (HC), Max Planck Institute for Plasma Physics, Max Planck Society
Position: Stellarator Heating and Optimisation (E3), Max Planck Institute for Plasma Physics, Max Planck Society
Researcher ID: https://pure.mpg.de/cone/persons/resource/persons109919
Publications
(1 - 25 of 47)
: Boioli, F., Zinovyev, V. A., Gatti, R., Marzegalli, A., Montalenti, F., Stoffel, M., Merdzhanova, T., Wang, L., Pezzoli, F., Rastelli, A., Schmidt, O. G., & Miglio, L. (2011). Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001). Journal of Applied Physics, 110(4): 044310. [PubMan] : Pernot, G., Stoffel, M., Savic, I., Pezzoli, F., Chen, P., Savelli, G., Jacquot, A., Schumann, J., Denker, U., Monch, I., Deneke, C., Schmidt, O. G., Rampnoux, J. M., Wang, S., Plissonnier, M., Rastelli, A., Dilhaire, S., & Mingo, N. (2010). Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers. Nature Materials, 9(6), 491-495. [PubMan] : Mei, Y. F., Thurmer, D. J., Deneke, C., Kiravittaya, S., Chen, Y. F., Dadgar, A., Bertram, F., Bastek, B., Krost, A., Christen, J., Reindl, T., Stoffel, M., Coric, E., & Schmidt, O. G. (2009). Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets. ACS Nano, 3(7), 1663-1668. [PubMan] : Pezzoli, F., Stoffel, M., Merdzhanova, T., Rastelli, A., & Schmidt, O. G. (2009). Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography. Nanoscale Research Letters, 4(9), 1073-1077. [PubMan] : Stoffel, M., Malachias, A., Rastelli, A., Metzger, T. H., & Schmidt, O. G. (2009). Composition and strain in SiGe/Si(001) "nanorings" revealed by combined x-ray and selective wet chemical etching methods. Applied Physics Letters, 94(25): 253114. [PubMan] : Rastelli, A., Stoffel, M., Merdzhanova, T., & Schmidt, O. G. (2008). Intermixing and composition profiles of strained SiGe islands on Si(001). Journal of Physics: Condensed Matter, 20(45): 454214. [PubMan] : Ko, V., Teo, K. L., Liew, T., Chong, T. C., Liu, T., Wee, A. T. S., Du, A. Y., Stoffel, M., & Schmidt, O. G. (2008). Correlation of structural and magnetic properties of ferromagnetic Mn-implanted Si1-xGex films. Journal of Applied Physics, 103(5): 053912. [PubMan] : Rastelli, A., Stoffel, M., Malachias, A., Merdzhanova, T., Katsaros, G., Kern, K., Metzger, T. H., & Schmidt, O. G. (2008). Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters, 8(5), 1404-1409. [PubMan] : Stoffel, M., Malachias, A., Merdzhanova, T., Cavallo, F., Isella, G., Chrastina, D., von Kanel, H., Rastelli, A., & Schmidt, O. G. (2008). SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity. Semiconductor Science and Technology, 23(8): 085021. [PubMan] : Katsaros, G., Tersoff, J., Stoffel, M., Rastelli, A., Acosta-Diaz, P., Kar, G. S., Costantini, G., Schmidt, O. G., & Kern, K. (2008). Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters, 101(9): 096103. [PubMan] : Stoffel, M., Rastelli, A., Stangl, J., Merdzhanova, T., Bauer, G., & Schmidt, O. G. (2007). Shape oscillations: A walk through the phase diagram of strained islands. Physical Review B, 75(11): 113307. [PubMan] : Marzegalli, A., Zinovyev, V. A., Montalenti, F., Rastelli, A., Stoffel, M., Merdzhanova, T., Schmidt, O. G., & Miglio, L. (2007). Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001). Physical Review Letters, 99(23): 235505. [PubMan] : Stoffel, M., Rastelli, A., & Schmidt, O. G. (2007). Surface evolution and three-dimensional shape changes of SiGe/Si(001) islands during capping at various temperatures. Surface Science, 601(14), 3052-3059. [PubMan] : Malachias, A., Metzger, T. H., Stoffel, M., Schmidt, O. G., & Holý, V. (2007). Composition and atomic ordering of Ge/Si(001) wetting layers. Thin Solid Films, 515(14), 5587-5592. [PubMan] : Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O. G., Kern, K., & Tersoff, J. (2007). Three-dimensional isocompositional profiles of buried SiGe/Si(001) islands. Applied Physics Letters, 91(1): 013112. [PubMan] : Merdzhanova, T., Rastelli, A., Stoffel, M., Kiravittaya, S., & Schmidt, O. G. (2007). Island motion triggered by the growth of strain-relaxed SiGe/Si(001) islands. Journal of Crystal Growth, 301, 319-323. [PubMan] : Zhang, J. J., Stoffel, M., Rastelli, A., Schmidt, O. G., Jovanovic, V., Nanver, L. K., & Bauer, G. (2007). SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening. Applied Physics Letters, 91(17): 173115. [PubMan] : Stoffel, M., Zhang, J., & Schmidt, O. G. (2006). Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates. IEICE Transactions on Electronics, E89-C(7), 921-925. [PubMan] : Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O. G., Kern, K., Tersoff, J., Müller, E., & von Känel, H. (2006). Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters, 89(25): 253105. [PubMan] : Rastelli, A., Stoffel, M., Denker, U., Merdzhanova, T., & Schmidt, O. G. (2006). Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic relaxation. physica status solidi (a), 203(14), 3506-3511. [PubMan] : Rastelli, A., Stoffel, M., Katsaros, G., Tersoff, J., Denker, U., Merdzhanova, T., Kar, G. S., Costantini, G., Kern, K., von Känel, H., & Schmidt, O. G. (2006). Reading the footprints of strained islands. Microelectronics Journal, 37, 1471-1476. [PubMan] : Merdzhanova, T., Kiravittaya, S., Rastelli, A., Stoffel, M., Denker, U., & Schmidt, O. (2006). Dendrochronology of strain-relaxed islands. Physical Review Letters, 96(22): 226103. [PubMan] : Stoffel, M., Rastelli, A., Tersoff, J., Merdzhanova, T., & Schmidt, O. G. (2006). Local equilibrium and global relaxation of strained SiGe/Si(001) layers. Physical Review B, 74(15): 155326. [PubMan] : Stoffel, M., Rastelli, A., Merdzhanova, T., Kar, G. S., & Schmidt, O. G. (2006). Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands. Microelectronics Journal, 37, 1528-1531. [PubMan] : Katsaros, G., Rastelli, A., Stoffel, M., Isella, G., von Känel, H., Bittner, A. M., Tersoff, J., Denker, U., Schmidt, O. G., Costantini, G., & Kern, K. (2006). Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science, 600, 2608-2613. [PubMan]