Researcher Portfolio

 
   

Puig Sitjes, Aleix

Stellarator Dynamics and Transport (E5), Max Planck Institute for Plasma Physics, Max Planck Society, Stellarator Edge and Divertor Physics (E4), Max Planck Institute for Plasma Physics, Max Planck Society  

 

Researcher Profile

 
Position: Stellarator Edge and Divertor Physics (E4), Max Planck Institute for Plasma Physics, Max Planck Society
Position: Stellarator Dynamics and Transport (E5), Max Planck Institute for Plasma Physics, Max Planck Society
Additional IDs: ORCID: https://orcid.org/0000-0002-4733-6068
Researcher ID: https://pure.mpg.de/cone/persons/resource/persons206336

External references

 
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Publications

 
  (1 - 25 of 47)
 : Boioli, F., Zinovyev, V. A., Gatti, R., Marzegalli, A., Montalenti, F., Stoffel, M., Merdzhanova, T., Wang, L., Pezzoli, F., Rastelli, A., Schmidt, O. G., & Miglio, L. (2011). Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001). Journal of Applied Physics, 110(4): 044310. [PubMan] : Pernot, G., Stoffel, M., Savic, I., Pezzoli, F., Chen, P., Savelli, G., Jacquot, A., Schumann, J., Denker, U., Monch, I., Deneke, C., Schmidt, O. G., Rampnoux, J. M., Wang, S., Plissonnier, M., Rastelli, A., Dilhaire, S., & Mingo, N. (2010). Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers. Nature Materials, 9(6), 491-495. [PubMan] : Mei, Y. F., Thurmer, D. J., Deneke, C., Kiravittaya, S., Chen, Y. F., Dadgar, A., Bertram, F., Bastek, B., Krost, A., Christen, J., Reindl, T., Stoffel, M., Coric, E., & Schmidt, O. G. (2009). Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets. ACS Nano, 3(7), 1663-1668. [PubMan] : Pezzoli, F., Stoffel, M., Merdzhanova, T., Rastelli, A., & Schmidt, O. G. (2009). Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography. Nanoscale Research Letters, 4(9), 1073-1077. [PubMan] : Stoffel, M., Malachias, A., Rastelli, A., Metzger, T. H., & Schmidt, O. G. (2009). Composition and strain in SiGe/Si(001) "nanorings" revealed by combined x-ray and selective wet chemical etching methods. Applied Physics Letters, 94(25): 253114. [PubMan] : Rastelli, A., Stoffel, M., Merdzhanova, T., & Schmidt, O. G. (2008). Intermixing and composition profiles of strained SiGe islands on Si(001). Journal of Physics: Condensed Matter, 20(45): 454214. [PubMan] : Ko, V., Teo, K. L., Liew, T., Chong, T. C., Liu, T., Wee, A. T. S., Du, A. Y., Stoffel, M., & Schmidt, O. G. (2008). Correlation of structural and magnetic properties of ferromagnetic Mn-implanted Si1-xGex films. Journal of Applied Physics, 103(5): 053912. [PubMan] : Rastelli, A., Stoffel, M., Malachias, A., Merdzhanova, T., Katsaros, G., Kern, K., Metzger, T. H., & Schmidt, O. G. (2008). Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters, 8(5), 1404-1409. [PubMan] : Stoffel, M., Malachias, A., Merdzhanova, T., Cavallo, F., Isella, G., Chrastina, D., von Kanel, H., Rastelli, A., & Schmidt, O. G. (2008). SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity. Semiconductor Science and Technology, 23(8): 085021. [PubMan] : Katsaros, G., Tersoff, J., Stoffel, M., Rastelli, A., Acosta-Diaz, P., Kar, G. S., Costantini, G., Schmidt, O. G., & Kern, K. (2008). Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters, 101(9): 096103. [PubMan] : Stoffel, M., Rastelli, A., Stangl, J., Merdzhanova, T., Bauer, G., & Schmidt, O. G. (2007). Shape oscillations: A walk through the phase diagram of strained islands. Physical Review B, 75(11): 113307. [PubMan] : Marzegalli, A., Zinovyev, V. A., Montalenti, F., Rastelli, A., Stoffel, M., Merdzhanova, T., Schmidt, O. G., & Miglio, L. (2007). Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001). Physical Review Letters, 99(23): 235505. [PubMan] : Stoffel, M., Rastelli, A., & Schmidt, O. G. (2007). Surface evolution and three-dimensional shape changes of SiGe/Si(001) islands during capping at various temperatures. Surface Science, 601(14), 3052-3059. [PubMan] : Malachias, A., Metzger, T. H., Stoffel, M., Schmidt, O. G., & Holý, V. (2007). Composition and atomic ordering of Ge/Si(001) wetting layers. Thin Solid Films, 515(14), 5587-5592. [PubMan] : Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O. G., Kern, K., & Tersoff, J. (2007). Three-dimensional isocompositional profiles of buried SiGe/Si(001) islands. Applied Physics Letters, 91(1): 013112. [PubMan] : Merdzhanova, T., Rastelli, A., Stoffel, M., Kiravittaya, S., & Schmidt, O. G. (2007). Island motion triggered by the growth of strain-relaxed SiGe/Si(001) islands. Journal of Crystal Growth, 301, 319-323. [PubMan] : Zhang, J. J., Stoffel, M., Rastelli, A., Schmidt, O. G., Jovanovic, V., Nanver, L. K., & Bauer, G. (2007). SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening. Applied Physics Letters, 91(17): 173115. [PubMan] : Stoffel, M., Zhang, J., & Schmidt, O. G. (2006). Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates. IEICE Transactions on Electronics, E89-C(7), 921-925. [PubMan] : Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O. G., Kern, K., Tersoff, J., Müller, E., & von Känel, H. (2006). Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters, 89(25): 253105. [PubMan] : Rastelli, A., Stoffel, M., Denker, U., Merdzhanova, T., & Schmidt, O. G. (2006). Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic relaxation. physica status solidi (a), 203(14), 3506-3511. [PubMan] : Rastelli, A., Stoffel, M., Katsaros, G., Tersoff, J., Denker, U., Merdzhanova, T., Kar, G. S., Costantini, G., Kern, K., von Känel, H., & Schmidt, O. G. (2006). Reading the footprints of strained islands. Microelectronics Journal, 37, 1471-1476. [PubMan] : Merdzhanova, T., Kiravittaya, S., Rastelli, A., Stoffel, M., Denker, U., & Schmidt, O. (2006). Dendrochronology of strain-relaxed islands. Physical Review Letters, 96(22): 226103. [PubMan] : Stoffel, M., Rastelli, A., Tersoff, J., Merdzhanova, T., & Schmidt, O. G. (2006). Local equilibrium and global relaxation of strained SiGe/Si(001) layers. Physical Review B, 74(15): 155326. [PubMan] : Stoffel, M., Rastelli, A., Merdzhanova, T., Kar, G. S., & Schmidt, O. G. (2006). Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands. Microelectronics Journal, 37, 1528-1531. [PubMan] : Katsaros, G., Rastelli, A., Stoffel, M., Isella, G., von Känel, H., Bittner, A. M., Tersoff, J., Denker, U., Schmidt, O. G., Costantini, G., & Kern, K. (2006). Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science, 600, 2608-2613. [PubMan]