Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2

Narayanan, A.; Watson, M. D.; Blake, S. F.; Bruyant, N.; Drigo, L.; Chen, Y. L.; Prabhakaran, D.; Yan, B.; Felser, C.; Kong, T.; Canfield, P. C.; Coldea, A. I.

doi:10.1103/PhysRevLett.114.117201

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Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd₃As₂

Narayanan, A., Watson, M. D., Blake, S. F., Bruyant, N., Drigo, L., Chen, Y. L., et al. (2015). Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd₃As₂. Physical Review Letters, 114(11): 117201, pp. 1-5. doi:10.1103/PhysRevLett.114.117201.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0026-BE15-F Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002C-37DE-E

Genre: Journal Article

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Creators:
Narayanan, A.¹, Author
Watson, M. D.¹, Author
Blake, S. F.¹, Author
Bruyant, N.¹, Author
Drigo, L.¹, Author
Chen, Y. L.¹, Author
Prabhakaran, D.¹, Author
Yan, B.², Author
Felser, C.³, Author
Kong, T.¹, Author
Canfield, P. C.¹, Author
Coldea, A. I.¹, Author

Affiliations:
1External Organizations, ou_persistent22
2Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429

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Language(s): eng - English

Dates: Published Online: 2015-03-19Date issued: 2015-03-19

Publication Status: Issued

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Identifiers: ISI: 000351430600011
DOI: 10.1103/PhysRevLett.114.117201

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Title: Physical Review Letters

Abbreviation : Phys. Rev. Lett.

Source Genre: Journal

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Publ. Info: Woodbury, N.Y. : American Physical Society

Pages: - Volume / Issue: 114 (11) Sequence Number: 117201 Start / End Page: 1 - 5 Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1