Band gap and band parameters of InN and GaN from quasiparticle energy 
calculations based on exact-exchange density-functional theory.

Rinke, P.; Qteish, A.; Winkelnkemper, M.; Bimberg, D.; Neugebauer, J.; Scheffler, M.

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Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory.

Rinke, P., Qteish, A., Winkelnkemper, M., Bimberg, D., Neugebauer, J., & Scheffler, M. (2006). Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory. Applied Physics Letters, 89(16): 161919.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5C79-E Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5C7B-A

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Creators:
Rinke, P., Author
Qteish, A., Author
Winkelnkemper, M., Author
Bimberg, D., Author
Neugebauer, J.¹, Author
Scheffler, M., Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Dates: Date issued: 2006

Publication Status: Issued

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Identifiers: eDoc: 291372

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Title: Applied Physics Letters

Alternative Title : Appl. Phys. Lett.

Source Genre: Journal

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Pages: - Volume / Issue: 89 (16) Sequence Number: 161919 Start / End Page: - Identifier: -