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要旨:
We have investigated structural stability and electronic properties of
the layered semiconductor GaTe under hydrostatic pressure by X-ray
powder diffraction and optical reflectivity measurements in a diamond
anvil cell. The monoclinic low-pressure modification undergoes a
first-order phase transition at 10(1) GPa into a high-pressure polymorph
of the NaCl type structure. Thermal annealing at 475 K and 12 GPa for 12
h turned out to be essential for obtaining well-crystallized samples of
the high-pressure phase. The reconstructive structural change is
accompanied by a semiconductor-to-metal transition. The cubic
modification is metastable with decreasing pressures down to 3 GPa and
transforms to an amorphous phase at lower pressures.
