Modeling of electronic and optical properties of GaN/AlN quantum dots by using 
the k.p-method

Marquardt, O.; Hickel, T.; Neugebauer, J.

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Modeling of electronic and optical properties of GaN/AlN quantum dots by using the k.p-method

Marquardt, O., Hickel, T., & Neugebauer, J. (2008). Modeling of electronic and optical properties of GaN/AlN quantum dots by using the k.p-method. Talk presented at Bremen DFG Forschergruppe: Workshop in Riezlern. Riezlern, Austria. 2008-09-22 - 2008-09-26.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-460B-8 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-460D-4

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Urheber:
Marquardt, O.¹, Autor
Hickel, T.¹, Autor
Neugebauer, J.², Autor

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337