Enhancing the solubility of N in GaAs and InAs by surface kinetics

Abu-Farsakh, H.; Neugebauer, J.

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Enhancing the solubility of N in GaAs and InAs by surface kinetics

Abu-Farsakh, H., & Neugebauer, J. (2006). Enhancing the solubility of N in GaAs and InAs by surface kinetics. Poster presented at 28th International Conference on the Physics of Semiconductors, Vienna, Austria.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-58B0-1 Version Permalink: https://hdl.handle.net/21.11116/0000-0002-8FE5-B

Genre: Poster

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Creators:
Abu-Farsakh, H.¹, Author
Neugebauer, J.¹, Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2006-07

Publication Status: Not specified

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Identifiers: eDoc: 289363

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Title: 28th International Conference on the Physics of Semiconductors

Place of Event: Vienna, Austria

Start-/End Date: 2006-07-24 - 2006-07-28

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