Interface structure and chemistry of GaN on Ge(111)

Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

doi:10.1103/PhysRevLett.111.256101

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Interface structure and chemistry of GaN on Ge(111)

Zhang, S., Zhang, Y., Cui, Y., Freysoldt, C., Neugebauer, J., Lieten, R. R., et al. (2013). Interface structure and chemistry of GaN on Ge(111). Physical Review Letters, 111(25): 256101. doi:10.1103/PhysRevLett.111.256101.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-A134-D Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002E-23E7-7

Genre: Journal Article

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Creators:
Zhang, Siyuan¹, Author
Zhang, Yucheng^{1, 2}, Author
Cui, Ying³, Author
Freysoldt, Christoph³, Author
Neugebauer, Jörg⁴, Author
Lieten, Ruben R.⁵, Author
Barnard, Jonathan S.¹, Author
Humphreys, Colin J.¹, Author

Affiliations:
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, UK, ou_persistent22
2Electron Microscopy Center, EMPA, Dübendorf CH-8600, Switzerland, ou_persistent22
3Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
4Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337
5IMEC, KU Leuven, Kapeldreef 75, 3001 Heverlee, Belgium, ou_persistent22

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Language(s): eng - English

Dates: Accepted: 2013-08-31Date issued: 2013-12-16

Publication Status: Issued

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Rev. Type: Peer

Identifiers: DOI: 10.1103/PhysRevLett.111.256101

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Title: Physical Review Letters

Abbreviation : Phys. Rev. Lett.

Source Genre: Journal

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Pages: - Volume / Issue: 111 (25) Sequence Number: 256101 Start / End Page: - Identifier: ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.111.256101
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1