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Abstract:
Transition-metal dichalcogenides (TMDCs) stand out with their high chemical stability and the possibility to incorporate a wide range of atoms and molecules between the layers. The behavior of conduction electrons in such 3d-metal-inserted materials is closely related to their magnetic properties and can be sensitively controlled by external magnetic fields. Here, we study the magnetotransport properties of Mn-inserted NbS2, Mn1/4NbS2, demonstrating a complex behavior of the magnetoresistance and of the ordinary and anomalous Hall resistivity. Application of high pressure as tuning parameter leads to the drastic changes of the magnetotransport properties of Mn1/4NbS2 exhibiting large negative magnetoresistance up to -65% at 7.1 GPa. First-principles electronic structure calculations indicate a pressure-induced transition from a ferromagnetic to antiferromagnetic state. Theoretical calculations accounting for the finite temperature magnetic properties suggest a field-induced metamagnetic ferromagnetic-antiferromagnetic transition as an origin of the large negative magnetoresistance. These results inspire the development of materials for spintronic applications based on 3d-element-inserted TMDCs with a well controllable metamagnetic transition.
