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要旨:
The evolution of the crystal structure and electrical transport properties of distorted layered transition metal dichalcogenide ReSe2 was studied under high pressure up to similar to 90 GPa by Raman spectroscopy and electrical resistivity measurements accompanied by ab initio electronic band structure calculations. Raman spectroscopy studies indicate an isostructural phase transition due to layer sliding at similar to 7 GPa, to the distorted 1T-phase which remains stable up to the highest pressures employed in these experiments. From a direct band gap semiconductor at ambient pressure, ReSe2 undergoes pressure-induced metallization at pressures similar to 35 GPa, in agreement with the ab initio calculations. Resistivity measurements performed with different loading conditions reveal the possible emergence of superconductivity, which is most likely not an intrinsic property of ReSe2, but is rather conditioned by internal stresses upon compression.
