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  Laser effects on volta potential transients recorded by a kelvin probe

Verreault, D., Jubb, A. M., Frankel, G. S., Stratmann, M., Allen, H. C., & Posner, R. (2013). Laser effects on volta potential transients recorded by a kelvin probe. ECS Electrochemistry Letters, 2(5), H19-H21. doi:10.1149/2.004305eel.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-0001-E2CD-9 Versions-Permalink: https://hdl.handle.net/21.11116/0000-0001-E2CE-8
Genre: Zeitschriftenartikel

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 Urheber:
Verreault, Dominique1, Autor           
Jubb, Aaron M.2, 3, Autor           
Frankel, Gerald S.4, Autor           
Stratmann, Martin5, Autor           
Allen, Heather Cecile2, Autor           
Posner, Ralf2, 6, 7, Autor           
Affiliations:
1Department of Chemistry and Biochemistry, Ohio State University, Columbus, OH 43210, USA, persistent22              
2The Ohio State University, Department of Chemistry and Biochemistry, 100 West 18th Avenue, Columbus, OH 43210, USA, ou_persistent22              
3Earth System Research Laboratory, Chemical Sciences Division, University of Colorado, Boulder, CO 80305, USA, persistent22              
4Department of Materials Science and Engineering, Ohio State University, Columbus, OH 43210, USA, ou_persistent22              
5Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863348              
6The Ohio State University, Department of Materials Science and Engineering, 2041 College Road, Columbus, OH 43210, USA, ou_persistent22              
7Henkel AG & Co KGaA, 40589 Düsseldorf, Germany, ou_persistent22              

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Schlagwörter: Analytical applications; Different substrates; Highly reflective; Photovoltage transient; Potential shift; Solar cell devices; Structural rearrangement; Volta potential, Silicon wafers; Transients, Probes
 Zusammenfassung: A laser beam focused beneath a Kelvin probe needle allows for evaluation of laser-induced Volta potential shifts that can be used to identify (ir)reversible structural rearrangements at the sample surface. This work investigates the impact of laser irradiation on different substrate materials and the influence of laser power and wavelength to explore possible additional areas of analytical applications. Complete and instantaneous potential recovery was achieved with a 785 nm beam, whereas inverse and less meaningful potential shifts result for highly reflective Si wafers. Moreover, similarities to photovoltage transients recorded on solar cell devices are discussed.© 2013 The Electrochemical Society.

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Sprache(n): eng - English
 Datum: 2013
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1149/2.004305eel
BibTex Citekey: Verreault2013
 Art des Abschluß: -

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Titel: ECS Electrochemistry Letters
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: -
Seiten: - Band / Heft: 2 (5) Artikelnummer: - Start- / Endseite: H19 - H21 Identifikator: ISSN: 21628726