Strain-induced effects on the electronic structure and N K-edge ELNES of 
wurtzite AlN and AlxGa1-xN

Petrov, M.; Holec, D.; Lymperakis, L.; Neugebauer, J.; Humphreys, C. J.

doi:10.1088/1742-6596/326/1/012016

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Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1-xN

Petrov, M., Holec, D., Lymperakis, L., Neugebauer, J., & Humphreys, C. J. (2011). Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1-xN. Journal of Physics Conference Series, 326, 012016-1-012016-5.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3525-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3527-D

Genre: Conference Paper

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Creators:
Petrov, M.¹, Author
Holec, D., Author
Lymperakis, L.², Author
Neugebauer, J.³, Author
Humphreys, C. J., Author

Affiliations:
1Ab Initio Thermodynamics, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863338
2Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2011

Publication Status: Issued

Pages: -

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Identifiers: eDoc: 625768
DOI: 10.1088/1742-6596/326/1/012016

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Title: 17th International Conference on Microscopy of Semiconducting Materials 2011

Place of Event: University of Cambridge, UK

Start-/End Date: 2011-04-04 - 2011-04-07

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Title: Journal of Physics Conference Series

Alternative Title : J. Phys.: Conf. Ser.

Source Genre: Journal

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Publ. Info: IOP Publishing

Pages: - Volume / Issue: 326 Sequence Number: - Start / End Page: 012016-1 - 012016-5 Identifier: -