Ab-initio study of compositional anti-correlation of In and N in InGaAsN alloys

Abu-Farsakh, H.; Neugebauer, J.; Albrecht, M.

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Ab-initio study of compositional anti-correlation of In and N in InGaAsN alloys

Abu-Farsakh, H., Neugebauer, J., & Albrecht, M. (2007). Ab-initio study of compositional anti-correlation of In and N in InGaAsN alloys. Poster presented at The 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, USA.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5054-F Version Permalink: https://hdl.handle.net/21.11116/0000-0002-91B7-B

Genre: Poster

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Creators:
Abu-Farsakh, H.¹, Author
Neugebauer, J.¹, Author
Albrecht, M., Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2007-09

Publication Status: Not specified

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Identifiers: eDoc: 319953

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Title: The 7th International Conference of Nitride Semiconductors (ICNS-7)

Place of Event: Las Vegas, NV, USA

Start-/End Date: 2007-09-16 - 2007-09-21

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