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要旨:
Superconductivity and topological quantum states are two frontier fields of research in modern condensed matter physics. The realization of superconductivity in topological materials is highly desired; however, superconductivity in such materials is typically limited to two-dimensional or three-dimensional materials and is far from being thoroughly investigated. In this work, we boost the electronic properties of the quasi-one-dimensional topological insulator bismuth iodide beta-Bi4I4 by applying high pressure. Superconductivity is observed in beta-Bi4I4 for pressures, where the temperature dependence of the resistivity changes from a semiconducting- like behavior to that of a normal metal. The superconducting transition temperature T-c increases with applied pressure and reaches a maximum value of 6 K at 23 GPa, followed by a slow decrease. Our theoretical calculations suggest the presence of multiple pressure-induced topological quantum phase transitions as well as a structural-electronic instability.
