ausblenden:
Schlagwörter:
Molecular beam epitaxy; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography; Gallium arsenide; Indium arsenide; Single crystal surfaces
Zusammenfassung:
Morphology and structure of the GaAs(-3 –1 -5)B surface were investigated under Ga- and As-rich conditions. On atomic scale the Ga-rich surface is not flat, but exhibits a very anisotropic surface morphology. Narrow stripes of 1 x 1 structure extend along [1 2 -1]. The steps between the stripes often bunch together thus creating (-1 0 -1) facets. The As-rich surface is also not flat, but facets into vicinal (-5 –2 –1 -1)B surfaces with steps along the [1 3 -1]proj. and [ 2 1]proj.. () facets form on the sidewall of the steps along the [1 3 -1]proj.. In adsorbing a monoatomic layer of InAs the GaAs(-3 –1 -5)B surface becomes flat, and exhibits a c(2 x 2) reconstruction.
