The Influence of Structural Relaxation on the Valence-Band Offset at 
Semiconductor-Semiconductor Interfaces

Methfessel, Michael; Agrawal, B. K.; Scheffler, Matthias; Anastassakis, E. M.; Joannopoulos, J. D.

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The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces

Methfessel, M., Agrawal, B. K., & Scheffler, M. (1990). The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), 989-992.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22CF-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22D1-1

Genre: Journal Article

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Creators:
Methfessel, Michael¹, Author
Agrawal, B. K., Author
Scheffler, Matthias¹, Author
Anastassakis, E. M., Editor
Joannopoulos, J. D., Editor

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1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1990

Publication Status: Issued

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Title: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)

Source Genre: Journal

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 989 - 992 Identifier: -