Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN 
quantum wells

Marquardt, O.; Hickel, T.; Neugebauer, J.

doi:10.1063/1.4818752

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Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells

Marquardt, O., Hickel, T., & Neugebauer, J. (2013). Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells. Applied Physics Letters, 103(7), 073115-1-073115-4. doi:10.1063/1.4818752.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2606-8 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2608-4

Genre: Journal Article

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Creators:
Marquardt, O.¹, Author
Hickel, T.², Author
Neugebauer, J.³, Author

Affiliations:
1External Organizations, ou_persistent22
2Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2013

Publication Status: Issued

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Identifiers: eDoc: 670855
DOI: 10.1063/1.4818752

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Title: Applied Physics Letters

Alternative Title : Appl. Phys. Lett.

Source Genre: Journal

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Pages: - Volume / Issue: 103 (7) Sequence Number: - Start / End Page: 073115-1 - 073115-4 Identifier: -