Electronic structures and unusually robust bandgap in an ultrahigh-mobility 
layered oxide semiconductor, Bi2O2Se

Chen, Cheng; Wang, Meixiao; Wu, Jinxiong; Fu, Huixia; Yang, Haifeng; Tian, Zhen; Tu, Teng; Peng, Han; Sun, Yan; Xu, Xiang; Jiang, Juan; Schröter, Niels B. M.; Li, Yiwei; Pei, Ding; Liu, Shuai; Ekahana, Sandy A.; Yuan, Hongtao; Xue, Jiamin; Li, Gang; Jia, Jinfeng; Liu, Zhongkai; Yan, Binghai; Peng, Hailin; Chen, Yulin

doi:10.1126/sciadv.aat8355

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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi₂O₂Se

Chen, C., Wang, M., Wu, J., Fu, H., Yang, H., Tian, Z., et al. (2018). Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi₂O₂Se. Science Advances, 4(9): eaat8355, pp. 1-6. doi:10.1126/sciadv.aat8355.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0003-AB48-C Version Permalink: https://hdl.handle.net/21.11116/0000-0003-AB4A-A

Genre: Journal Article

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Creators:
Chen, Cheng¹, Author
Wang, Meixiao¹, Author
Wu, Jinxiong¹, Author
Fu, Huixia¹, Author
Yang, Haifeng¹, Author
Tian, Zhen¹, Author
Tu, Teng¹, Author
Peng, Han¹, Author
Sun, Yan², Author
Xu, Xiang¹, Author
Jiang, Juan¹, Author
Schröter, Niels B. M.¹, Author
Li, Yiwei¹, Author
Pei, Ding¹, Author
Liu, Shuai¹, Author
Ekahana, Sandy A.¹, Author
Yuan, Hongtao¹, Author
Xue, Jiamin¹, Author
Li, Gang¹, Author
Jia, Jinfeng¹, Author
Liu, Zhongkai¹, AuthorYan, Binghai¹, AuthorPeng, Hailin¹, AuthorChen, Yulin¹, Author more..

Affiliations:
1External Organizations, ou_persistent22
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425

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Language(s): eng - English

Dates: Published Online: 2018-09-14Date issued: 2018-09-14

Publication Status: Issued

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Identifiers: ISI: 000449224000044
DOI: 10.1126/sciadv.aat8355

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Title: Science Advances

Other : Sci. Adv.

Source Genre: Journal

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Publ. Info: Washington : AAAS

Pages: - Volume / Issue: 4 (9) Sequence Number: eaat8355 Start / End Page: 1 - 6 Identifier: ISSN: 2375-2548
CoNE: https://pure.mpg.de/cone/journals/resource/2375-2548