Towards wafer-size graphene layers by atmospheric pressure graphitization of 
silicon carbide

Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A.; Röhrl, Jonas; Rotenberg, Eli; Schmid, Andreas K.; Waldmann, Daniel; Weber, Heiko B.; Seyller, Thomas

doi:10.1038/nmat2382

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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Emtsev, K. V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G. L., Ley, L., et al. (2009). Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials, 8, 203-207. doi:10.1038/nmat2382.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-FA06-C Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-FA07-A

Genre: Journal Article

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Emtsev, Konstantin V., Author
Bostwick, Aaron, Author
Horn, Karsten¹, Author
Jobst, Johannes, Author
Kellogg, Gary L., Author
Ley, Lothar, Author
McChesney, Jessica L., Author
Ohta, Taisuke¹, Author
Reshanov, Sergey A., Author
Röhrl, Jonas, Author
Rotenberg, Eli, Author
Schmid, Andreas K., Author
Waldmann, Daniel, Author
Weber, Heiko B., Author
Seyller, Thomas, Author

Affiliations:
1Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545

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Free keywords: Condensed-matter physics

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Language(s): eng - English

Dates: Date issued: 2009-02-09

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 429449
URI: http://www.nature.com/nmat/journal/v8/n3/abs/nmat2382.html
DOI: 10.1038/nmat2382

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Title: Nature Materials

Source Genre: Journal

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Pages: - Volume / Issue: 8 Sequence Number: - Start / End Page: 203 - 207 Identifier: ISSN: 1476-1122