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  Original and sputtering induced interface roughness in AES sputter depth profiling of SiO2/Ta2O5 multilayers

Rar, A., Kojima, I., Moon, D., & Hofmann, S. (1999). Original and sputtering induced interface roughness in AES sputter depth profiling of SiO2/Ta2O5 multilayers. Thin Solid Films, 355-356, 390-394.

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 Creators:
Rar, A., Author
Kojima, I., Author
Moon, D.W., Author
Hofmann, S.1, Author           
Affiliations:
1Dept. Phase Transformations; Thermodynamics and Kinetics, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497644              

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Free keywords: MPI für Metallforschung; Abt. Mittemeijer;
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Language(s): eng - English
 Dates: 1999
 Publication Status: Issued
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 Rev. Type: -
 Identifiers: eDoc: 232698
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Title: Thin Solid Films
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 355-356 Sequence Number: - Start / End Page: 390 - 394 Identifier: -