Ordering phenomena and formation of nanostructures in InxGa1−xN layers 
coherently grown on GaN(0001)

Lee, Sangheon; Freysoldt, Christoph; Neugebauer, Jörg

doi:10.1103/PhysRevB.90.245301

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Ordering phenomena and formation of nanostructures in In_xGa_1−xN layers coherently grown on GaN(0001)

Lee, S., Freysoldt, C., & Neugebauer, J. (2014). Ordering phenomena and formation of nanostructures in In_xGa_1−xN layers coherently grown on GaN(0001). Physical Review B, 90(24): 245301. doi:10.1103/PhysRevB.90.245301.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-5B75-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002E-2A33-1

Genre: Journal Article

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Creators:
Lee, Sangheon¹, Author
Freysoldt, Christoph¹, Author
Neugebauer, Jörg², Author

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Submitted: 2014-10-09Accepted: 2014-11-25Date issued: 2014-12-08

Publication Status: Issued

Pages: 10

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Rev. Type: Peer

Identifiers: DOI: 10.1103/PhysRevB.90.245301

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Title: Physical Review B

Other : Phys. Rev. B

Source Genre: Journal

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Pages: 10 Volume / Issue: 90 (24) Sequence Number: 245301 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008