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  Band parameters and strain effects in ZnO and group-III nitrides

Yan, Q., Rinke, P., Winkelnkemper, M., Qteish, A., Bimberg, D., Scheffler, M., et al. (2011). Band parameters and strain effects in ZnO and group-III nitrides. Semiconductor Science and Technology, 26: 014037. doi:http://dx.doi.org/10.1088/0268-1242/26/1/014037.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-F712-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-F715-F
Genre: Journal Article

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special_issue.res.pdf (Any fulltext), 474KB
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2011
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 Creators:
Yan, Qimin, Author
Rinke, Patrick1, Author           
Winkelnkemper, Momme1, Author           
Qteish, A.1, Author           
Bimberg, D., Author
Scheffler, Matthias1, Author           
Van de Walle, Chris G., Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 20102011
 Publication Status: Issued
 Pages: 8
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 477152
URI: http://www.fhi-berlin.mpg.de/th/th.html
DOI: http://dx.doi.org/10.1088/0268-1242/26/1/014037
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Title: Semiconductor Science and Technology
  Alternative Title : Semicond. Sci. Technol.
Source Genre: Journal
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Pages: - Volume / Issue: 26 Sequence Number: 014037 Start / End Page: - Identifier: -