Skyrmion lattice in the doped semiconductor Fe1-xCoxSi

Münzer, W.; Neubauer, A.; Adams, T.; Mühlbauer, S.; Franz, C.; Jonietz, F.; Georgii, R.; Böni, P.; Pedersen, B.; Schmidt, M.; Rosch, A.; Pfleiderer, C.

doi:10.1103/PhysRevB.81.041203

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Skyrmion lattice in the doped semiconductor Fe_1-xCo_xSi

Münzer, W., Neubauer, A., Adams, T., Mühlbauer, S., Franz, C., Jonietz, F., et al. (2010). Skyrmion lattice in the doped semiconductor Fe_1-xCo_xSi. Physical Review B, 81: 041203, pp. 041203-1-041203-4. doi:10.1103/PhysRevB.81.041203.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-250C-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0018-F5B3-D

Genre: Journal Article

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Münzer, W., Author
Neubauer, A., Author
Adams, T., Author
Mühlbauer, S., Author
Franz, C., Author
Jonietz, F., Author
Georgii, R., Author
Böni, P., Author
Pedersen, B., Author
Schmidt, M.¹, Author
Rosch, A., Author
Pfleiderer, C., Author

Affiliations:
1Marcus Schmidt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863415

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Language(s): eng - English

Dates: Date issued: 2010-01-20

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 460451
ISI: 000274002500005
DOI: 10.1103/PhysRevB.81.041203

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Title: Physical Review B

Source Genre: Journal

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Pages: - Volume / Issue: 81 Sequence Number: 041203 Start / End Page: 041203-1 - 041203-4 Identifier: ISSN: 1098-0121