A comparison of atomistic and continuum theoretical approaches to determine 
electronic properties of GaN/AlN quantum dots

Marquardt, O.; Mourad, D.; Schulz, S.; Hickel, T.; Czycholl, G.; Neugebauer, J.

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A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots

Marquardt, O., Mourad, D., Schulz, S., Hickel, T., Czycholl, G., & Neugebauer, J. (2008). A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. Physical Review B, 78: 235302.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-4509-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-450B-E

Genre: Journal Article

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Creators:
Marquardt, O.¹, Author
Mourad, D., Author
Schulz, S.², Author
Hickel, T.¹, Author
Czycholl, G., Author
Neugebauer, J.³, Author

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2008-12-01

Publication Status: Issued

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Identifiers: eDoc: 377770

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Title: Physical Review B

Alternative Title : Phys. Rev. B.

Source Genre: Journal

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Pages: - Volume / Issue: 78 Sequence Number: 235302 Start / End Page: - Identifier: -