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  Effect of ion beam assisted deposition on the growth of indium tin oxide (ITO) nanowires.

Yu, H. K., & Lee, J. L. (2014). Effect of ion beam assisted deposition on the growth of indium tin oxide (ITO) nanowires. CrystEngComm, 16(20), 4108-4112. doi:10.1039/C4CE00237G.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-BE50-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0029-C004-D
Genre: Journal Article

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 Creators:
Yu, H. K.1, Author           
Lee, J. L., Author
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1Department of Dynamics at Surfaces, MPI for Biophysical Chemistry, Max Planck Society, ou_578600              

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 Abstract: We developed a method to control the alignment and density of indium tin oxide (ITO) nanowires by using ion beam assisted deposition (IBAD). During electron beam evaporation, IBAD changed the randomly oriented branch type nanowires to aligned nanowires without branches. This is due to the energetic ion beams which play a role in nucleating tin containing indium nanodots at the initial stage of growth. The improved alignment of the ITO nanowires reduced the sensing time for ethanol gas.

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Language(s): eng - English
 Dates: 2014-03-06
 Publication Status: Published online
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 Rev. Type: Peer
 Identifiers: DOI: 10.1039/C4CE00237G
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Title: CrystEngComm
Source Genre: Journal
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Pages: - Volume / Issue: 16 (20) Sequence Number: - Start / End Page: 4108 - 4112 Identifier: -