Surface potential changes of semiconducting oxides monitored by high-pressure 
photoelectron spectroscopy: Importance of electron concentration at the surface

Gassenbauer, Yvonne; Schafranek, Robert; Klein, Andreas; Zafeiratos, Spiros; Hävecker, Michael; Knop-Gericke, Axel; Schlögl, Robert

doi:10.1016/j.ssi.2006.07.036

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Surface potential changes of semiconducting oxides monitored by high-pressure photoelectron spectroscopy: Importance of electron concentration at the surface

Gassenbauer, Y., Schafranek, R., Klein, A., Zafeiratos, S., Hävecker, M., Knop-Gericke, A., et al. (2006). Surface potential changes of semiconducting oxides monitored by high-pressure photoelectron spectroscopy: Importance of electron concentration at the surface. Solid State Ionics, 177(35-36), 3123-3127. doi:10.1016/j.ssi.2006.07.036.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-067E-E Version Permalink: https://hdl.handle.net/21.11116/0000-0005-ED5B-B

Genre: Journal Article

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Creators:
Gassenbauer, Yvonne, Author
Schafranek, Robert, Author
Klein, Andreas, Author
Zafeiratos, Spiros¹, Author
Hävecker, Michael¹, Author
Knop-Gericke, Axel¹, Author
Schlögl, Robert¹, Author

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1Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023

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Free keywords: Semiconductors

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Language(s): eng - English

Dates: Date issued: 2006

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 299356
DOI: 10.1016/j.ssi.2006.07.036

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Title: Solid State Ionics

Source Genre: Journal

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Pages: - Volume / Issue: 177 (35-36) Sequence Number: - Start / End Page: 3123 - 3127 Identifier: -