Confined and chemically flexible grain boundaries in polycrystalline compound 
semiconductors

Abou-Ras, D.; Schmidt, S.S.; Caballero, R.; Unold, T.; Schock, H.W.; Koch, C.T.; Schaffer, B.; Schaffer, M.; Choi, P.; Cojocaru-Mirédin, O.

doi:10.1002/aenm.201100764

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Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors

Abou-Ras, D., Schmidt, S., Caballero, R., Unold, T., Schock, H., Koch, C., et al. (2012). Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors. Advanced Energy Materials, 2(8), 992-998. doi:10.1002/aenm.201100764.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-284B-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-284D-7

Genre: Journal Article

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Abou-Ras, D., Author
Schmidt, S.S., Author
Caballero, R., Author
Unold, T., Author
Schock, H.W., Author
Koch, C.T., Author
Schaffer, B., Author
Schaffer, M., Author
Choi, P.¹, Author
Cojocaru-Mirédin, O.¹, Author

Affiliations:
1Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384

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Language(s): eng - English

Dates: Date issued: 2012-08

Publication Status: Issued

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Identifiers: eDoc: 611055
DOI: 10.1002/aenm.201100764

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Title: Advanced Energy Materials

Alternative Title : Adv. En. Mat.

Source Genre: Journal

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Pages: - Volume / Issue: 2 (8) Sequence Number: - Start / End Page: 992 - 998 Identifier: -