Nanoscale residual stress-field mapping around nanoindents in SiC by IR s-SNOM 
and confocal Raman microscopy

Gigler, A. M.; Huber, A. J.; Bauer, M.; Ziegler, A.; Hillenbrand, R.; Stark, R. W.

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Nanoscale residual stress-field mapping around nanoindents in SiC by IR s-SNOM and confocal Raman microscopy

Gigler, A. M., Huber, A. J., Bauer, M., Ziegler, A., Hillenbrand, R., & Stark, R. W. (2009). Nanoscale residual stress-field mapping around nanoindents in SiC by IR s-SNOM and confocal Raman microscopy. Optics Express, 17(25), 22351-22357.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-5831-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-5832-1

Genre: Journal Article

Alternative Title : Opt. Express

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Creators:
Gigler, A. M., Author
Huber, A. J.¹, Author
Bauer, M.², Author
Ziegler, A.¹, Author
Hillenbrand, R.¹, Author
Stark, R. W., Author

Affiliations:
1Baumeister, Wolfgang / Molecular Structural Biology, Max Planck Institute of Biochemistry, Max Planck Society, ou_1565142
2External Organizations, ou_persistent22

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Language(s): eng - English

Dates: Date issued: 2009-12-07

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 442248
ISI: 000272761300009

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Title: Optics Express

Alternative Title : Opt. Express

Source Genre: Journal

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Pages: - Volume / Issue: 17 (25) Sequence Number: - Start / End Page: 22351 - 22357 Identifier: ISSN: 1094-4087