Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

 
 
DownloadE-Mail
  Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2

Baskakov, A. O., Ogarkova, Y. L., Lyubutin, I. S., Starchikov, S. S., Ksenofontov, V., Shylin I, S., et al. (2019). Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2. JETP Letters, 109(8), 536-540. doi:10.1134/S0021364019080058.

Item is

Basisdaten

einblenden: ausblenden:
Genre: Zeitschriftenartikel

Externe Referenzen

einblenden:

Urheber

einblenden:
ausblenden:
 Urheber:
Baskakov, A. O.1, Autor
Ogarkova, Yu. L.1, Autor
Lyubutin, I. S.1, Autor
Starchikov, S. S.1, Autor
Ksenofontov, V1, Autor
Shylin I, S.1, Autor
Kroitor, D.1, Autor
Tsurkan, V1, Autor
Medvedev, S. A.2, Autor           
Naumov, P. G.3, Autor           
Affiliations:
1External Organizations, ou_persistent22              
2Sergiy Medvediev, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863438              
3Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              

Inhalt

einblenden:
ausblenden:
Schlagwörter: -
 Zusammenfassung: The transport and magnetic properties of the Rb0.8Fe1.6S2 crystal have been studied under quasihydrostatic compression to a pressure of 40.5 GPa in diamond anvil cells. A semiconductor-semimetal electronic transition has been detected at a pressure of about 15 GPa. In addition, the disappearance of the magnetic order down to a temperature of 3 K has been found at a pressure of 24 GPa. It has been shown that, in contrast to a similar selenium compound Rb0.8Fe1.6Se2, superconductivity in Rb0.8Fe1.6S2 sulfide does not appear down to the lowest temperatures even at an external pressure of 40.5 GPa.

Details

einblenden:
ausblenden:
Sprache(n): eng - English
 Datum: 2019-04-252019-04-25
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000474413200010
DOI: 10.1134/S0021364019080058
 Art des Abschluß: -

Veranstaltung

einblenden:

Entscheidung

einblenden:

Projektinformation

einblenden:

Quelle 1

einblenden:
ausblenden:
Titel: JETP Letters
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: Woodbury, N.Y. [etc.] : American Institute of Physics
Seiten: - Band / Heft: 109 (8) Artikelnummer: - Start- / Endseite: 536 - 540 Identifikator: ISSN: 0021-3640
CoNE: https://pure.mpg.de/cone/journals/resource/954926954827_1