Extended defects in GaN from an atomistic modelling point view

Blumenau, A. T.

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Extended defects in GaN from an atomistic modelling point view

Blumenau, A. T. (2007). Extended defects in GaN from an atomistic modelling point view. Talk presented at OPTO 2007, Integrated Optoelectronic Devices. San Jose, California, USA. 2007-01-20 - 2007-01-25.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-53F3-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-53F5-D

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Creators:
Blumenau, A. T.¹, Author

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1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351

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Identifiers: eDoc: 330154

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Title: OPTO 2007, Integrated Optoelectronic Devices

Place of Event: San Jose, California, USA

Start-/End Date: 2007-01-20 - 2007-01-25

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