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  Microstructure analysis of silicon nanocrystals formed from silicon rich oxide with high excess silicon: Annealing and doping effects

Nomoto, K., Yang, T. C. J., Ceguerra, A. V., Zhang, T., Lin, Z., Breen, A. J., et al. (2017). Microstructure analysis of silicon nanocrystals formed from silicon rich oxide with high excess silicon: Annealing and doping effects. Journal of Applied Physics, 122(2): 025102, pp. 1-9. doi:10.1063/1.4990983.

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Nomoto, Keita1, 2, Autor           
Yang, Terry Chien Jen2, Autor           
Ceguerra, Anna Vallarta3, Autor           
Zhang, Tian2, Autor           
Lin, Ziyun2, Autor           
Breen, Andrew J.4, Autor           
Wu, Liangcai2, Autor           
Puthen-Veettil, Binesh2, Autor           
Jia, Xuguang5, Autor           
Conibeer, Gavin J.2, Autor           
van Perez-Wurfl, I.2, Autor           
Ringer, Simon P.6, Autor           
Affiliations:
1School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, Sydney, NSW, Australia, persistent22              
2School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, Australia, persistent22              
3Australian Centre for Microscopy and Microanalysis, School of Aerospace, Mechatronic and Mechanical Engineering, University of Sydney, NSW 2006, Australia, ou_persistent22              
4Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
5School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, Jiangsu, China, persistent22              
6Australian Institute for Nanoscale Science and Technology, and School of Aerospace Mechanical and Mechatronic Engineering, The University of Sydney, Australia, ou_persistent22              

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Sprache(n): eng - English
 Datum: 2017-07-14
 Publikationsstatus: Erschienen
 Seiten: 9
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: DOI: 10.1063/1.4990983
 Art des Abschluß: -

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Titel: Journal of Applied Physics
  Kurztitel : J. Appl. Phys.
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: -
Seiten: - Band / Heft: 122 (2) Artikelnummer: 025102 Start- / Endseite: 1 - 9 Identifikator: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880