Influence of strain and polarization on electronic properties of a GaN/AlN 
quantum dot

Young, T. D.; Marquardt, O.

doi:10.1002/pssc.200880901

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Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot

Young, T. D., & Marquardt, O. (2009). Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot. Physica Status Solidi C, C6(S2), S557-S560. doi:10.1002/pssc.200880901.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-429E-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-42A0-1

Genre: Journal Article

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Creators:
Young, T. D., Author
Marquardt, O.¹, Author

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341

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Language(s): eng - English

Dates: Date issued: 2009-01-23

Publication Status: Issued

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Identifiers: eDoc: 377644
DOI: 10.1002/pssc.200880901

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Title: Physica Status Solidi C

Alternative Title : phys. status solidi C

Source Genre: Journal

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Pages: - Volume / Issue: C6 (S2) Sequence Number: - Start / End Page: S557 - S560 Identifier: -