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  Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Pau, J. L., Rivera, C., Muñoz, E., Calleja, E., Schühle, U., Frayssinet, E., et al. (2004). Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet. Journal of Applied Physics, 95, 8275-8279. doi:10.1063/1.1748855.

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 Creators:
Pau, J. L., Author
Rivera, C., Author
Muñoz, E., Author
Calleja, E., Author
Schühle, U.1, 2, Author           
Frayssinet, E., Author
Beaumont, B., Author
Faurie, J. P., Author
Gibart, P., Author
Affiliations:
1MPI for Aeronomy, Max Planck Institute for Solar System Research, Max Planck Society, ou_1832291              
2Department Sun and Heliosphere, Max Planck Institute for Solar System Research, Max Planck Society, ou_1832289              

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 MPIS_GROUPS: Sun and Heliosphere
 MPIS_PROJECTS: BOLD
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 Dates: 2004
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.1748855
BibTex Citekey: Pau:2004-111
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Title: Journal of Applied Physics
Source Genre: Journal
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Pages: - Volume / Issue: 95 Sequence Number: - Start / End Page: 8275 - 8279 Identifier: -