Resistance switching in two-terminal ferroelectric-semiconductor lateral 
heterostructures

Asadi, Kamal

doi:10.1063/1.5128611

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Resistance switching in two-terminal ferroelectric-semiconductor lateral heterostructures

Asadi, K. (2020). Resistance switching in two-terminal ferroelectric-semiconductor lateral heterostructures. Applied Physics Reviews, 7(2): 021307. doi:10.1063/1.5128611.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0006-957A-9 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-957B-8

Genre: Journal Article

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Creators:
Asadi, Kamal^{1, 2}, Author

Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284
2Humboldt Research Group Asadi: Organic/Inorganic Hybrids, MPI for Polymer Research, Max Planck Society, ou_2243638

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Language(s): eng - English

Dates: Published Online: 2020-06-02Date issued: 2020

Publication Status: Issued

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Identifiers: DOI: 10.1063/1.5128611

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Title: Applied Physics Reviews

Abbreviation : Appl. Phys. Rev.

Source Genre: Journal

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Publ. Info: USA : American Institute of Physics

Pages: - Volume / Issue: 7 (2) Sequence Number: 021307 Start / End Page: - Identifier: ISSN: 1931-9401
CoNE: https://pure.mpg.de/cone/journals/resource/1931-9401