Optical properties of As antisite and EL2 defects in GaAs

Meyer, B. K.; Spaeth, J.-M.; Scheffler, M.

doi:10.1103/PhysRevLett.52.851

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Optical properties of As antisite and EL2 defects in GaAs

Meyer, B. K., Spaeth, J.-M., & Scheffler, M. (1984). Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters, 52, 851-854. doi:10.1103/PhysRevLett.52.851.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-2369-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0026-D04A-E

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Creators:
Meyer, B. K.¹, Author
Spaeth, J.-M., Author
Scheffler, M.², Author

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1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1984

Publication Status: Issued

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Identifiers: eDoc: 2874
DOI: 10.1103/PhysRevLett.52.851

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Title: Physical Review Letters

Abbreviation : Phys. Rev. Lett.

Source Genre: Journal

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Publ. Info: Woodbury, N.Y. : American Physical Society

Pages: - Volume / Issue: 52 Sequence Number: - Start / End Page: 851 - 854 Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1