Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl

Ouardi, S.; Fecher, G. H.; Felser, C.; Kübler, J.

doi:10.1103/PhysRevLett.110.100401

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Realization of Spin Gapless Semiconductors: The Heusler Compound Mn₂CoAl

Ouardi, S., Fecher, G. H., Felser, C., & Kübler, J. (2013). Realization of Spin Gapless Semiconductors: The Heusler Compound Mn₂CoAl. Physical Review Letters, 110(10): 100401, pp. 100401-1-100401-5. doi:10.1103/PhysRevLett.110.100401.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-1F28-D Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-1F29-B

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Creators:
Ouardi, S.¹, Author
Fecher, G. H.², Author
Felser, C.³, Author
Kübler, J., Author

Affiliations:
1Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439
2Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429

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Language(s): eng - English

Dates: Date issued: 2013-03-05

Publication Status: Issued

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Identifiers: eDoc: 636522
DOI: 10.1103/PhysRevLett.110.100401

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Title: Physical Review Letters

Source Genre: Journal

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Pages: - Volume / Issue: 110 (10) Sequence Number: 100401 Start / End Page: 100401-1 - 100401-5 Identifier: ISSN: 0031-9007