Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

 
 
DownloadE-Mail
  Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films

Taylor, J. M., Lesne, E., Markou, A., Dejene, F. K., Ernst, B., Kalache, A., et al. (2019). Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films. Physical Review Materials, 3(7): 074409, pp. 1-12. doi:10.1103/PhysRevMaterials.3.074409.

Item is

Basisdaten

einblenden: ausblenden:
Genre: Zeitschriftenartikel

Externe Referenzen

einblenden:

Urheber

einblenden:
ausblenden:
 Urheber:
Taylor, James M.1, Autor
Lesne, Edouard1, Autor
Markou, Anastasios2, Autor           
Dejene, Fasil Kidane1, Autor
Ernst, Benedikt2, Autor           
Kalache, Adel2, Autor           
Rana, Kumari Gaurav1, Autor
Kumar, Neeraj1, Autor
Werner, Peter1, Autor
Felser, Claudia3, Autor           
Parkin, Stuart S. P.1, Autor
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

Inhalt

einblenden:
ausblenden:
Schlagwörter: -
 Zusammenfassung: Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet Mn3Ir. Using epitaxial engineering on MgO (001) and Al2O3 (0001) single-crystal substrates, we control the growth of cubic gamma-Mn3Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 0.115 erg cm(-2) or 11.5 nJ cm(-2)) measured in Mn3Ir (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn3Ir (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.

Details

einblenden:
ausblenden:
Sprache(n): eng - English
 Datum: 2019-07-302019-07-30
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Art des Abschluß: -

Veranstaltung

einblenden:

Entscheidung

einblenden:

Projektinformation

einblenden:

Quelle 1

einblenden:
ausblenden:
Titel: Physical Review Materials
  Kurztitel : Phys. Rev. Mat.
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: College Park, MD : American Physical Society
Seiten: - Band / Heft: 3 (7) Artikelnummer: 074409 Start- / Endseite: 1 - 12 Identifikator: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953