The Dangling-bond Defect in Crystalline and Amorphous Silicon: Insights from Ab 
initio Calculations of EPR-parameters

Pfanner, G.; Freysoldt, C.; Neugebauer, J.

Item

ITEM ACTIONSEXPORT

DownloadE-Mail

Please note that a newer version of this item is available:
https://pure.mpg.de/pubman/item/item_2014208_2

DetailsSummary

The Dangling-bond Defect in Crystalline and Amorphous Silicon: Insights from Ab initio Calculations of EPR-parameters

Pfanner, G., Freysoldt, C., & Neugebauer, J. (2012). The Dangling-bond Defect in Crystalline and Amorphous Silicon: Insights from Ab initio Calculations of EPR-parameters. Talk presented at MRS Spring Meeting. San Francisco, CA, USA. 2012-04-11.

Item is Released

show all hide all

Basic

show hide

Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2A5D-8 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2A5F-4

Genre: Talk

Files

show Files

Locators

show

Creators

show

hide

Creators:
Pfanner, G.¹, Author
Freysoldt, C.¹, Author
Neugebauer, J.², Author

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

Content

show

Details

show

hide

Language(s): eng - English

Dates:

Publication Status: Not specified

Pages: -

Publishing info: -

Table of Contents: -

Rev. Type: -

Identifiers: eDoc: 614919

Degree: -

Event

show

hide

Title: MRS Spring Meeting

Place of Event: San Francisco, CA, USA

Start-/End Date: 2012-04-11

Legal Case

show

Project information

show

Source

show