English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
 
 
DownloadE-Mail
  Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate

Schmitt, S. W., Broenstrup, G., Shalev, G., Srivastava, S. K., Bashouti, M. Y., Doehler, G. H., et al. (2014). Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate. NANOSCALE, 6(14), 7897-7902. doi:10.1039/c4nr01258e.

Item is

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Schmitt, S. W.1, Author           
Broenstrup, G.1, Author           
Shalev, G.2, Author
Srivastava, S. K.2, Author
Bashouti, M. Y.1, Author           
Doehler, G. H.3, Author           
Christiansen, S. H.1, 4, Author           
Affiliations:
1Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
2external, ou_persistent22              
3External Organizations, ou_persistent22              
4Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              

Content

show
hide
Free keywords: P-N-JUNCTIONS; OPTICAL-PROPERTIES; SOLAR-CELLS; PHOTOVOLTAIC DEVICES; TRANSISTORS; SURFACES; ARRAYS; GLASSChemistry; Science & Technology - Other Topics; Materials Science; Physics;
 Abstract: Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e. g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Details

show
hide
Language(s): eng - English
 Dates: 2014
 Publication Status: Issued
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000338638900026
DOI: 10.1039/c4nr01258e
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: NANOSCALE
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND : ROYAL SOC CHEMISTRY
Pages: - Volume / Issue: 6 (14) Sequence Number: - Start / End Page: 7897 - 7902 Identifier: ISSN: 2040-3364