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  Characterization and optimization of a thin direct electron detector for fast imaging applications

Dourki, I., Westermeier, F., Schopper, F., Richter, R., Andricek, L., Ninkovic, J., et al. (2017). Characterization and optimization of a thin direct electron detector for fast imaging applications. In Journal of Instrumentation. doi:10.1088/1748-0221/12/03/C03047.

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Dourki_2017_J._Inst._12_C03047.pdf (Verlagsversion), 3MB
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Dourki_2017_J._Inst._12_C03047.pdf
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2017
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© IOP Publishing Ltd and Sissa Medialab
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https://doi.org/10.1088/1748-0221/12/03/C03047 (Verlagsversion)
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 Urheber:
Dourki, Ibrahym1, 2, Autor           
Westermeier, F.2, Autor
Schopper, F.3, Autor
Richter, R.H.3, Autor
Andricek, L.3, Autor
Ninkovic, J.3, Autor
Treis, J.3, Autor
Koffmane, C.3, Autor
Wassatsch, A.3, Autor
Peric, I.4, Autor
Epp, S.W.2, Autor
Miller, R.J.D.2, 5, Autor
Affiliations:
1International Max Planck Research School for Ultrafast Imaging & Structural Dynamics (IMPRS-UFAST), Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266714              
2Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany, ou_persistent22              
3Halbleiterlabor der Max-Planck-Gesellschaft, Otto-Hahn-Ring 6, 81739 München, Germany, ou_persistent22              
4Karlsruhe Institute of Technology (KIT), Institute for Data Processing and Electronics (IPE), 76021 Karlsruhe, Germany, ou_persistent22              
5Departments of Chemistry and Physics, University of Toronto, 80 St. George Street, Toronto M5S 1H6, Canada, ou_persistent22              

Inhalt

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Schlagwörter: Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc); Solid state detectors
 Zusammenfassung: Direct electron detectors are increasingly used to explore the dynamics of macromolecules in real space and real time using transmission electron microscopy. The purpose of this work is to optimize the most suitable detector configuration of a thin silicon detector by Monte Carlo Simulations. Several simulations were performed to achieve an advanced detector geometry that reduces significantly the background signal due to backscattered electrons resulting in an enhanced imaging performance of the detector. Utilizing DEPFET (DEpleted P-channel Field Effect Transistor) technology and the novel ideas for the optimized detector geometry, a unique direct hit electron detector is currently being produced.

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Sprache(n): eng - English
 Datum: 2016-09-302017-02-142017-03-132017-03-13
 Publikationsstatus: Erschienen
 Seiten: 8
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1088/1748-0221/12/03/C03047
 Art des Abschluß: -

Veranstaltung

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Titel: 18th International Workshop on Radiation Imaging Detectors
Veranstaltungsort: Barcelona, Spain
Start-/Enddatum: 2016-07-03 - 2016-07-07

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Quelle 1

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Titel: Journal of Instrumentation
Genre der Quelle: Konferenzband
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