Gallium nitride thin layers via a liquid precursor route.

Puchinger, M.; Wagner, T.; Rodewald, D.; Bill, J.; Aldinger, F.; Lange, F. F.

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Gallium nitride thin layers via a liquid precursor route.

Puchinger, M., Wagner, T., Rodewald, D., Bill, J., Aldinger, F., & Lange, F. F. (2000). Gallium nitride thin layers via a liquid precursor route. Journal of Crystal Growth, 208, 153-159.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-37D3-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-37D4-E

Genre: Journal Article

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Creators:
Puchinger, M.¹, Author
Wagner, T.², Author
Rodewald, D., Author
Bill, J.³, Author
Aldinger, F.^{3, 4}, Author
Lange, F. F., Author

Affiliations:
1Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497655
2Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640
3Universität Stuttgart, Institut für Nichtmetallische Anorganische Materialien, ou_persistent22
4Former Dept. Materials Synthesis and Microstructure Design, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497654

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Free keywords: MPI für Metallforschung; Abt. Aldinger;

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Dates: Date issued: 2000

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 198692

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Title: Journal of Crystal Growth

Source Genre: Journal

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Pages: - Volume / Issue: 208 Sequence Number: - Start / End Page: 153 - 159 Identifier: -