Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

 
 
DownloadE-Mail
  Quantum spin Hall phase in Mo2M2C3O2 (M = Ti,} Zr{, Hf) MXenes

Si, C., You, J., Shi, W., Zhou, J., & Sun, Z. (2016). Quantum spin Hall phase in Mo2M2C3O2 (M = Ti,} Zr{, Hf) MXenes. Journal of Materials Chemistry C: Materials for Optical and Electronic Devices, 4, 11524-11529. doi:10.1039/C6TC04560J.

Item is

Externe Referenzen

einblenden:
ausblenden:
externe Referenz:
Link (beliebiger Volltext)
Beschreibung:
-
OA-Status:

Urheber

einblenden:
ausblenden:
 Urheber:
Si, Chen1, Autor
You, Jinxuan1, Autor
Shi, Wujun2, Autor           
Zhou, Jian1, Autor
Sun, Zhimei1, Autor
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              

Inhalt

einblenden:
ausblenden:
Schlagwörter: -
 Zusammenfassung: The quantum spin Hall (QSH) phase is a peculiar physical phenomenon characterized by topologically protected helical edge states,} with potential applications in lower-power electronics and spintronics. Here{,} using first-principles calculations{,} we predict the QSH phase in Mo2M2C3O2 (M = Ti{,} Zr{,} or Hf){,} new members with ordered structures in the family of two-dimensional transition metal carbides (MXenes). The QSH phase which is confirmed by the nontrivial Z2 topological invariant and Dirac edge states arises from a d-d band inversion between the M-dxy{,}x2-y2 and the Mo-dz2 orbitals and a spin-orbital coupling (SOC)-induced splitting of the M-dxy{,}x2-y2 orbital at the [Gamma] point. With different M atoms{, the QSH gap of Mo2M2C3O2 ranges from 38 to 152 meV. These findings will broaden the scientific and technological impacts of both QSH materials and MXenes.

Details

einblenden:
ausblenden:
Sprache(n): eng - English
 Datum: 2016-11-152016-11-15
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: DOI: 10.1039/C6TC04560J
BibTex Citekey: C6TC04560J
 Art des Abschluß: -

Veranstaltung

einblenden:

Entscheidung

einblenden:

Projektinformation

einblenden:

Quelle 1

einblenden:
ausblenden:
Titel: Journal of Materials Chemistry C: Materials for Optical and Electronic Devices
  Andere : J. Mater. Chem. C
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: London, UK : Royal Society of Chemistry
Seiten: - Band / Heft: 4 Artikelnummer: - Start- / Endseite: 11524 - 11529 Identifikator: ISSN: 2050-7526
CoNE: https://pure.mpg.de/cone/journals/resource/2050-7526