Interface structure of epitaxial (111) VN films on (111) MgO substrates

Lazar, Petr; Rashkova, Boryana; Redinger, Josef; Podloucky, Raimund; Mitterer, Christian; Scheu, Christina; Dehm, Gerhard

doi:10.1016/j.tsf.2008.06.006

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Interface structure of epitaxial (111) VN films on (111) MgO substrates

Lazar, P., Rashkova, B., Redinger, J., Podloucky, R., Mitterer, C., Scheu, C., et al. (2008). Interface structure of epitaxial (111) VN films on (111) MgO substrates. Thin Solid Films, 517(3), 1177-1181. doi:10.1016/j.tsf.2008.06.006.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-54A9-C Version Permalink: https://hdl.handle.net/21.11116/0000-0001-6D43-A

Genre: Journal Article

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Creators:
Lazar, Petr¹, Author
Rashkova, Boryana^{2, 3}, Author
Redinger, Josef¹, Author
Podloucky, Raimund⁴, Author
Mitterer, Christian⁵, Author
Scheu, Christina⁶, Author
Dehm, Gerhard^{2, 3}, Author

Affiliations:
1Institute of Applied Physics, Vienna University of Technology, Vienna, Austria, ou_persistent22
2Erich-Schmid-Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, 8700 Leoben, Austria, ou_persistent22
3Department of Materials Physics, Montanuniversität Leoben, Austria, ou_persistent22
4Department of Physical Chemistry, Vienna University, Vienna, Austria, ou_persistent22
5Department of Physical Metallurgy and Materials Testing, Christian-Doppler Laboratory for Advanced Coatings, University of Leoben, Austria, ou_persistent22
6Department Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Franz-Josef-Str. 18, 8700 Leoben, Austria, ou_persistent22

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Abstract: Vanadium nitride VN was grown epitaxially on (111) MgO by reactive magnetron sputtering. The substrate preparation and deposition conditions cause an interface roughness of 2–3 nm. The lattice mismatch of cube-on-cube orientation relationship between (111) VN and (111) MgO is relaxed by misfit dislocations. Ab-initio simulations were employed to calculate the lowest energy configuration of the coherent parts of the interface. This is accomplished by an O termination of the MgO and V termination of VN at the interface.

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Language(s): eng - English

Dates: Published Online: 2008-06-09Date issued: 2008-12-01

Publication Status: Issued

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Rev. Type: Peer

Identifiers: DOI: 10.1016/j.tsf.2008.06.006

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Title: Thin Solid Films

Abbreviation : Thin Solid Films

Source Genre: Journal

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Publ. Info: Lausanne, Switzerland, etc. : Elsevier

Pages: - Volume / Issue: 517 (3) Sequence Number: - Start / End Page: 1177 - 1181 Identifier: ISSN: 0040-6090
CoNE: https://pure.mpg.de/cone/journals/resource/954925449792