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  Time-resolved single dopant charge dynamics in silicon

Rashidi, M., Burgess, J. A. J., Taucer, M., Achal, R., Pitters, J. L., Loth, S., et al. (2016). Time-resolved single dopant charge dynamics in silicon. Nature Communications, 7: 13258. doi:10.1038/ncomms13258.

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 Creators:
Rashidi, Mohammad1, 2, Author
Burgess, Jacob A. J.3, 4, Author           
Taucer, Marco1, 2, Author
Achal, Roshan1, Author
Pitters, Jason L.2, Author
Loth, Sebastian3, 4, Author           
Wolkow, Robert A.1, 2, Author
Affiliations:
1Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2J1, Canada, ou_persistent22              
2National Institute for Nanotechnology, National Research Council of Canada, Edmonton, Alberta, T6G 2M9, Canada, ou_persistent22              
3Dynamics of Nanoelectronic Systems, Independent Research Groups, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938290              
4Max Planck Institute for Solid State Research, ou_persistent22              

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Free keywords: Condensed Matter; Mesoscale and Nanoscale Physics; Imaging techniques; Semiconductors
 Abstract: As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified.

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Language(s): eng - English
 Dates: 2015-12-032016-06-152016-09-082016-10-26
 Publication Status: Published online
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: arXiv: 1512.01101
DOI: 10.1038/ncomms13258
 Degree: -

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Title: Nature Communications
  Abbreviation : Nat. Commun.
Source Genre: Journal
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Publ. Info: London : Nature Publishing Group
Pages: - Volume / Issue: 7 Sequence Number: 13258 Start / End Page: - Identifier: ISSN: 2041-1723
CoNE: https://pure.mpg.de/cone/journals/resource/2041-1723