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  Trapping of D in SiC and damage due to implantation

Siegele, R., Withrow, S., Roth, J., & Scherzer, B. M. U. (1990). Trapping of D in SiC and damage due to implantation. Journal of Nuclear Materials, 176-177, 1010-1017. doi:10.1016/0022-3115(90)90183-N.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002E-8CDA-3 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-52D4-E
Genre: Journal Article

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Locator:
https://doi.org/10.1016/0022-3115(90)90183-N (Publisher version)
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 Creators:
Siegele, R.1, Author           
Withrow, S.P.2, Author
Roth, J.1, Author           
Scherzer, B. M. U.1, Author           
Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288              
2External Organizations, ou_persistent22              

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Free keywords: Konferenzbeitrag
 Abstract: -

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Language(s): eng - English
 Dates: 1990
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/0022-3115(90)90183-N
 Degree: -

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Title: Journal of Nuclear Materials
  Subtitle : 9th International Conference on Plasma Surface Interactions in Controlled Fusion Devices (PSI 9), Bournemouth, 1990-05-21 to 1990-05-25
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Amsterdam : Elsevier B.V.
Pages: - Volume / Issue: 176-177 Sequence Number: - Start / End Page: 1010 - 1017 Identifier: ISSN: 0022-3115
CoNE: https://pure.mpg.de/cone/journals/resource/954925416962