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  Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices

Soltau, H., Krause, N., Meidinger, N., Hauff, D., Krisch, S., Strüder, L., et al. (1996). Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices. In C. Claeys (Ed.), Proceedings of the 4th International Symposium on High Purity Silicon (pp. 325-337). Electrochemical Society.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-ED52-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-ED54-0
Genre: Conference Paper

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soltau-defect96.pdf (Any fulltext), 866KB
 
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 Creators:
Soltau, H.1, Author           
Krause, N.2, Author           
Meidinger, N.1, Author           
Hauff, D.1, Author           
Krisch, S.1, Author           
Strüder, L.1, Author           
Zanthier, C. von1, Author           
Affiliations:
1High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society, ou_159890              
2Infrared and Submillimeter Astronomy, MPI for Extraterrestrial Physics, Max Planck Society, ou_159889              

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Language(s): eng - English
 Dates: 1996
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 315439
Other: 4545d
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Title: 4th International Symposium on High Purity Silicon
Place of Event: San Antonio, TX, USA
Start-/End Date: 1996-10-06 - 1996-10-11

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Title: Proceedings of the 4th International Symposium on High Purity Silicon
Source Genre: Proceedings
 Creator(s):
Claeys, C.L., Editor
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Publ. Info: Electrochemical Society
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 325 - 337 Identifier: ISBN: 1-5667-7156-0

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Title: Electrochemical Society Proceedings
Source Genre: Series
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Pages: - Volume / Issue: 96-13 Sequence Number: - Start / End Page: - Identifier: -