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  Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: a study by high-resolution Rutherford backscattering

Dash, S. P., Goll, D., & Carstanjen, H. D. (2007). Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: a study by high-resolution Rutherford backscattering. Applied Physics Letters, 90: 132109. doi:10.1063/1.2717525.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-4365-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-4366-5
Genre: Journal Article

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 Creators:
Dash, S. P.1, Author           
Goll, D.1, 2, Author           
Carstanjen, H. D.1, 3, Author           
Affiliations:
1Dept. Modern Magnetic Systems, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497648              
2Former Minerva Research Group Magnetic Nanostructures, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497662              
3Former Central Scientific Facility Pelletron Accelerator, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497653              

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Free keywords: MPI für Intelligente Systeme; Abt. Schütz; Selbständige wissenschaftliche Nachwuchsgruppe Goll;
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Language(s): eng - English
 Dates: 2007
 Publication Status: Issued
 Pages: (3 pages)
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 317042
DOI: 10.1063/1.2717525
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Title: Applied Physics Letters
Source Genre: Journal
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Pages: - Volume / Issue: 90 Sequence Number: 132109 Start / End Page: - Identifier: -