Incorporation of N at GaAs and InAs surfaces: An ab-initio study

Abu-Farsakh, H.; Neugebauer, J.

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Incorporation of N at GaAs and InAs surfaces: An ab-initio study

Abu-Farsakh, H., & Neugebauer, J. (2006). Incorporation of N at GaAs and InAs surfaces: An ab-initio study. Talk presented at Technische Universität Berlin. Berlin, Germany. 2006-04-12.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-59EC-8 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-59EE-4

Genre: Talk

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Creators:
Abu-Farsakh, H.¹, Author
Neugebauer, J.¹, Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Publication Status: Not specified

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Identifiers: eDoc: 289362

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Title: Technische Universität Berlin

Place of Event: Berlin, Germany

Start-/End Date: 2006-04-12

Invited: Yes

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