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  Microstructure analysis of silicon nanocrystals formed from silicon rich oxide with high excess silicon: Annealing and doping effects

Nomoto, K., Yang, T. C. J., Ceguerra, A. V., Zhang, T., Lin, Z., Breen, A. J., et al. (2017). Microstructure analysis of silicon nanocrystals formed from silicon rich oxide with high excess silicon: Annealing and doping effects. Journal of Applied Physics, 122(2): 025102, pp. 1-9. doi:10.1063/1.4990983.

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 Creators:
Nomoto, Keita1, 2, Author           
Yang, Terry Chien Jen2, Author           
Ceguerra, Anna Vallarta3, Author           
Zhang, Tian2, Author           
Lin, Ziyun2, Author           
Breen, Andrew J.4, Author           
Wu, Liangcai2, Author           
Puthen-Veettil, Binesh2, Author           
Jia, Xuguang5, Author           
Conibeer, Gavin J.2, Author           
van Perez-Wurfl, I.2, Author           
Ringer, Simon P.6, Author           
Affiliations:
1School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, Sydney, NSW, Australia, persistent22              
2School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, Australia, persistent22              
3Australian Centre for Microscopy and Microanalysis, School of Aerospace, Mechatronic and Mechanical Engineering, University of Sydney, NSW 2006, Australia, ou_persistent22              
4Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
5School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, Jiangsu, China, persistent22              
6Australian Institute for Nanoscale Science and Technology, and School of Aerospace Mechanical and Mechatronic Engineering, The University of Sydney, Australia, ou_persistent22              

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Language(s): eng - English
 Dates: 2017-07-14
 Publication Status: Issued
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1063/1.4990983
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 122 (2) Sequence Number: 025102 Start / End Page: 1 - 9 Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880