Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

 
 
DownloadE-Mail
  All Electrical Access to Topological Transport Features in Mn1.8PtSn Films

Schlitz, R., Swekis, P., Markou, A., Reichlova, H., Lammel, M., Gayles, J., et al. (2019). All Electrical Access to Topological Transport Features in Mn1.8PtSn Films. Nano Letters, 19(4), 2366-2370. doi:10.1021/acs.nanolett.8b05042.

Item is

Basisdaten

einblenden: ausblenden:
Genre: Zeitschriftenartikel

Externe Referenzen

einblenden:

Urheber

einblenden:
ausblenden:
 Urheber:
Schlitz, Richard1, Autor
Swekis, Peter2, Autor           
Markou, Anastasios2, Autor           
Reichlova, Helena1, Autor
Lammel, Michaela1, Autor
Gayles, Jacob2, Autor           
Thomas, Andy1, Autor
Nielsch, Kornelius1, Autor
Felser, Claudia3, Autor           
Goennenwein, Sebastian T. B.1, Autor
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

Inhalt

einblenden:
ausblenden:
Schlagwörter: -
 Zusammenfassung: The presence of nontrivial magnetic topology can give rise to nonvanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn1.8PtSn below the spin reorientation temperature T-SR approximate to 190 K. The magnitude of the topological Hall effect rho(T)(xy) = 8 n Omega m is close to the value reported in bulk Mn2PtSn, and the topological Nernst effect S-xy(T) = 115 nV K-1 measured in the same microstructure has a similar magnitude as reported for bulk MnGe (S-xy(T) similar to 150 nV K-1), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows one to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nanopatterned materials without detrimental magnetization related limitations.

Details

einblenden:
ausblenden:
Sprache(n): eng - English
 Datum: 2019-03-072019-03-07
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000464769100022
DOI: 10.1021/acs.nanolett.8b05042
 Art des Abschluß: -

Veranstaltung

einblenden:

Entscheidung

einblenden:

Projektinformation

einblenden:

Quelle 1

einblenden:
ausblenden:
Titel: Nano Letters
  Kurztitel : Nano Lett.
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: Washington, DC : American Chemical Society
Seiten: - Band / Heft: 19 (4) Artikelnummer: - Start- / Endseite: 2366 - 2370 Identifikator: ISSN: 1530-6984
CoNE: https://pure.mpg.de/cone/journals/resource/110978984570403